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AEGIS
SEMICONDUTORES LTDA.
A1A:180.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 150OC A1A:180.02 A1A:180.04 A1A:180.06 A1A:180.08 A1A:180.10 A1A:180.12 A1A:180.14 A1A:180.16 A1A:180.18 A1A:180.20 A1A:180.22 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 TJ = -40 to 0OC 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 150 C 300 500 700 900 1100 1300 1500 1700 1900 2100 2300
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This datasheet applies to: Metric thread: A1A:180.XX, A1B:180.XX Inch thread: A2A:180.XX, A2B:180.XX
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature @ Max. TC IF(RMS) Nom. RMS current IF(AV) Max. Av. current VALUE -40 to 150 -40 to 150 180 125 235 3000 IFSM Max. Peak non-rep. surge current 3140 A 3570 3740 45 I2t Max. I2t capability 41 64 58 I2t1/2 Max. I2t1/2 capability F Mounting Force 640 10(~89) kA2s1/2 N.m(Lbf.in) kA2s 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms Initial T J = 150OC, no voltage applied after surge. Initial T J = 150O C, no voltage applied after surge.
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UNITS
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NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial T J = 150O C, rated VRRM applied after surge.
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C C
A
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C
A
Initial T J = 150 C, rated VRRM applied after surge.
t = 8.3 ms Initial T J = 150OC, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
AEGIS
SEMICONDUTORES LTDA.
A1A:180.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO) Threshold voltage rF Forward slope resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ------------------TYP. ------10 --------100(3.5) MAX. UNITS 1.33 0.67 1.42 20.00 0.35 0.40 0.43 0.08 --V V mW mA
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TEST CONDITIONS O Initial T J = 25 C, sinusoidal wave, Ipeak = 566A. TJ = 150 C, Av. Power = V F(TO)*IF(AV) +rF*[IF(RMS)]2, sine. Use low values for IFM < pIF(AV) TJ = 150 C. Max. Rated VRRM
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C/W DC operation C/W 180O sine wave C/W 120O rectangular wave
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C/W Mtg. Surface smooth, flat and greased. Single side. -----
g(oz.) JEDEC
DO-205AA (DO-8)
150
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
150
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
140
140
130
30 60 90 120 180
130
30 60 90 120 180
120
DC
120 0 20 40 60 80 100 120 140 160 180 200
*Sinusoidal waveform
110
*Rectangular waveform
0
50
100
150
200
250
300
Average Forward Current (A)
Average Froward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:180.XX
Maximum Average Forward Power Loss
Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W)
1600 1400 1200 1000 800 600 400 200 0
*Sinusoidal waveform 60 30
1400 1200
Maximum Average Forward Power Loss
30
1000 800 600 400 200 0
*Rectangular waveform 60
90 120 180 DC
90 120 180
0
50
100
150
200
250
0
50
100
150
200
250
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Forward Voltage Drop Characteristics Transient Thermal Impedance ZthJC (C/W)
1
Transient Thermal Impedance ZthJC
Instantaneous Forward Current (A)
1000
0.1
100
TJ = 125C
TJ = 25C
10 0.0 0.5 1.0 1.5 2.0 2.5
0.01 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A1A:180.XX
DO-205AA (DO-8)

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